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Cascadable Silicon Bipolar MMIC Amplifier Technical Data
MSA-0400
Features
* Cascadable 50 Gain Block * 3 dB Bandwidth: DC to 4.0 GHz * 8.5 dB Typical Gain at 1.0 GHz * 16.0 dBm Typical P 1 dB at 1.0 GHz
The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. The recommended assembly procedure is gold-eutectic die attach at 400C and either wedge or ball bonding using 0.7 mil gold wire. See APPLICATIONS section, "Chip Use".
Chip Outline[1]
Description
The MSA-0400 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) chip. This MMIC is designed for use as a general purpose 50 gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial, industrial and military applications.
Note: 1. Refer to the APPLICATIONS section "Silicon MMIC Chip Use" for additional information.
Typical Biasing Configuration
R bias VCC > 10 V
RFC (Optional) C block IN
MSA
C block OUT Vd = 6.3 V
5965-9572E
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MSA-0400 Absolute Maximum Ratings
Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 120 mA 850 mW +13 dBm 200C -65 to 200C Thermal Resistance[2,4]: jc = 35C/W
Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TMounting Surface (TMS) = 25C. 3. Derate at 28.6 mW/C for TMS > 170 C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information.
Part Number Ordering Information
Part Number MSA-0400-GP4 Devices Per Tray 100
Electrical Specifications[1], TA = 25C
Symbol
GP GP f3 dB VSWR NF P1 dB IP3 tD Vd dV/dT
Parameters and Test Conditions[2]: Id = 90 mA, ZO = 50
Power Gain (|S21| 2) Gain Flatness 3 dB Bandwidth Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 to 2.5 GHz f = 0.1 to 2.5 GHz f = 1.0 GHz f = 1.0 GHz, Id = 50 mA f = 1.0 GHz, Id = 90 mA f = 1.0 GHz f = 1.0 GHz f = 0.1 GHz f = 0.1 to 2.5 GHz
Units
dB dB GHz
Min.
Typ.
8.5 0.6 4.3 1.7:1 1.8:1
Max.
dB dBm dBm dBm psec V mV/C 5.7
6.5 12.5 16.0 30.0 140 6.3 -8.0 6.9
Notes: 1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following page. 2. RF performance of the chip is determined by packaging and testing 10 devices per wafer in a dual ground configuration.
Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 50 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.1 0.5 1.0 1.5 2.0 2.5 3.0 4.0 5.0
.18 .18 .16 .16 .21 .27 .33 .42 .45
179 -179 -171 -161 -156 -152 -159 -171 172
8.6 8.6 8.5 8.4 8.2 7.8 7.0 5.2 3.4
2.68 2.68 2.65 2.63 2.56 2.45 2.23 1.81 1.49
177 163 145 127 109 98 82 54 3
-16.4 -16.3 -15.8 -15.4 -14.6 -13.8 -13.4 -12.5 -11.7
.151 .153 .161 .169 .187 .205 .213 .237 .259
1 7 10 16 18 24 24 21 17
.10 .16 .22 .29 .33 .37 .42 .42 .38
-13 -54 -83 -101 -119 -128 -140 -151 -153
1.37 1.34 1.28 1.19 1.07 0.98 0.91 0.86 0.94
Note: 1. S-parameters are de-embedded from 70 mil package measured data using the package model found in the DEVICE MODELS section.
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MSA-0400 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 90 mA)
Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k
0.1 0.5 1.0 1.5 2.0 2.5 3.0 4.0 5.0
.25 .24 .22 .16 .13 .12 .14 .17 .20
179 173 166 164 173 -162 -147 -154 146
8.7 8.8 8.8 8.8 8.7 8.3 8.0 6.7 5.2
2.73 2.76 2.74 2.74 2.73 2.60 2.50 2.17 1.83
177 164 148 132 116 106 90 64 41
-16.4 -16.3 -15.9 -15.3 -14.5 -13.9 -13.1 -10.9 -9.2
.152 .153 .160 .172 .189 .203 .222 .286 .346
2 5 10 16 22 31 33 36 36
.03 .10 .19 .27 .32 .36 .40 .43 .40
-36 -83 -91 -94 -98 -95 -95 -93 -94
1.33 1.31 1.26 1.18 1.10 1.04 0.97 0.87 0.89
Note: 1. S-parameters are de-embedded from 200 mil BeO package measured data using the package model found in the DEVICE MODELS section.
Typical Performance, TA = 25C
(unless otherwise noted)
12 10 9
G p (dB)
10
P1 dB (dBm)
18 16 14 12 P1 dB
8
G p (dB)
Gain Flat to DC 6 4
8
G p (dB)
9 8 7 6 110 5 -55 -25 +25 NF GP
9
NF (dB)
8 7 6 +85 5 +125
7 2 0 6
0.1 GHz 1.0 GHz 2.0 GHz 30 50 70 90
0.1
0.3 0.5
1.0
3.0
6.0
FREQUENCY (GHz)
I d (mA)
TEMPERATURE (C)
Figure 1. Typical Power Gain vs. Frequency, TA = 25C, Id = 90 mA.
Figure 2. Power Gain vs. Current.
Figure 3. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Mounting Surface Temperature, f=1.0 GHz, Id=90mA.
24 21
7.5
I d = 110 mA 7.0 I d = 90 mA
P1 dB (dBm)
18 15 12 9 6 0.1
NF (dB)
6.5
I d = 50 mA
6.0 I d = 110 mA I d = 90 mA 5.5 I d = 50 mA 0.1 0.2 0.3 0.5 1.0 2.0
0.2 0.3
0.5
1.0
2.0
4.0
FREQUENCY (GHz)
FREQUENCY (GHz)
Figure 4. Output Power at 1 dB Gain Compression vs. Frequency.
Figure 5. Noise Figure vs. Frequency.
6-320
MSA-0400 Chip Dimensions
INPUT
394 m 15.5 mil
GROUND
OPTIONAL [1] OUTPUT
394 m 15.5 mil Unless otherwise specified, tolerances are 13 m / 0.5 mils. Chip thickness is 114 m / 4.5 mil. Bond Pads are 41 m / 1.6 mil typical on each side. Note 1: Output contact is made by die attaching the backside of the die.
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